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SSM6N813R,LXHF - Toshiba Semiconductor and Storage - Transistors - FETs, MOSFETs - Arrays

SSM6N813R,LXHF

Toshiba Semiconductor and Storage

AUTO AEC-Q SS MOS DUAL N-CH LOW

SSM6N813R,LXHF is a Transistors - FETs, MOSFETs - Arrays manufactured by Toshiba Semiconductor and Storage. AUTO AEC-Q SS MOS DUAL N-CH LOW. Key specifications: mounting type Surface Mount, operating temperature 175°C, package / case 6-SMD, Flat Leads, power - max 1.5W (Ta).

In Stock: 3,635

Product Attributes

AttributeValue
Product StatusActive
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C3.5A (Ta)
Rds On (Max) @ Id, Vgs112mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs3.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds242pF @ 15V
Power - Max1.5W (Ta)
Operating Temperature175°C
Mounting TypeSurface Mount
Package / Case6-SMD, Flat Leads
Supplier Device Package6-TSOP-F

Frequently Asked Questions

SSM6N813R,LXHF is a Transistors - FETs, MOSFETs - Arrays manufactured by Toshiba Semiconductor and Storage. AUTO AEC-Q SS MOS DUAL N-CH LOW

The mounting type of SSM6N813R,LXHF is Surface Mount.

The operating temperature range of SSM6N813R,LXHF is 175°C.

The package type of SSM6N813R,LXHF is 6-SMD, Flat Leads.

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