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SSM6N7002BFE,LM - Toshiba Semiconductor and Storage - Transistors - FETs, MOSFETs - Arrays

SSM6N7002BFE,LM

Toshiba Semiconductor and Storage

MOSFET 2N-CH 60V 0.2A ES6

SSM6N7002BFE,LM is a Transistors - FETs, MOSFETs - Arrays manufactured by Toshiba Semiconductor and Storage. MOSFET 2N-CH 60V 0.2A ES6. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case SOT-563, SOT-666, power - max 150mW.

In Stock: 11,959

Product Attributes

AttributeValue
Product StatusActive
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C200mA
Rds On (Max) @ Id, Vgs2.1Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id3.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs-
Input Capacitance (Ciss) (Max) @ Vds17pF @ 25V
Power - Max150mW
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSOT-563, SOT-666
Supplier Device PackageES6

Frequently Asked Questions

SSM6N7002BFE,LM is a Transistors - FETs, MOSFETs - Arrays manufactured by Toshiba Semiconductor and Storage. MOSFET 2N-CH 60V 0.2A ES6

The mounting type of SSM6N7002BFE,LM is Surface Mount.

The operating temperature range of SSM6N7002BFE,LM is 150°C (TJ).

The package type of SSM6N7002BFE,LM is SOT-563, SOT-666.

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