Toshiba Semiconductor and Storage
MOSFET 2N-CH 20V 0.1A US6
SSM6N16FUTE85LF is a Transistors - FETs, MOSFETs - Arrays manufactured by Toshiba Semiconductor and Storage. MOSFET 2N-CH 20V 0.1A US6. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case 6-TSSOP, SC-88, SOT-363, power - max 200mW.
In Stock: 5,698
| Attribute | Value |
|---|---|
| Product Status | Active |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 100mA |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 10mA, 4V |
| Vgs(th) (Max) @ Id | 1.1V @ 100µA |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Input Capacitance (Ciss) (Max) @ Vds | 9.3pF @ 3V |
| Power - Max | 200mW |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Supplier Device Package | US6 |
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