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HN4A51JTE85LF - Toshiba Semiconductor and Storage - Transistors - Bipolar (BJT) - Arrays

HN4A51JTE85LF

Toshiba Semiconductor and Storage

TRANS 2PNP 120V 0.1A SMV

HN4A51JTE85LF is a Transistors - Bipolar (BJT) - Arrays manufactured by Toshiba Semiconductor and Storage. TRANS 2PNP 120V 0.1A SMV. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case SC-74A, SOT-753, current - collector (ic) (max) 100mA.

In Stock: 10,287

Product Attributes

AttributeValue
Product StatusActive
Transistor Type2 PNP (Dual)
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)120V
Vce Saturation (Max) @ Ib, Ic300mV @ 1mA, 10mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 2mA, 6V
Power - Max300mW
Frequency - Transition100MHz
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSC-74A, SOT-753
Supplier Device PackageSMV

Frequently Asked Questions

HN4A51JTE85LF is a Transistors - Bipolar (BJT) - Arrays manufactured by Toshiba Semiconductor and Storage. TRANS 2PNP 120V 0.1A SMV

The mounting type of HN4A51JTE85LF is Surface Mount.

The operating temperature range of HN4A51JTE85LF is 150°C (TJ).

The package type of HN4A51JTE85LF is SC-74A, SOT-753.

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