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HN1B01FU-Y,LXHF - Toshiba Semiconductor and Storage - Transistors - Bipolar (BJT) - Arrays

HN1B01FU-Y,LXHF

Toshiba Semiconductor and Storage

AUTO AEC-Q PNP + NPN TR VCEO:-50

HN1B01FU-Y,LXHF is a Transistors - Bipolar (BJT) - Arrays manufactured by Toshiba Semiconductor and Storage. AUTO AEC-Q PNP + NPN TR VCEO:-50. Key specifications: mounting type Surface Mount, package / case 6-TSSOP, SC-88, SOT-363, current - collector (ic) (max) 150mA, power - max 200mW.

In Stock: 8,061

Product Attributes

AttributeValue
Product StatusActive
Transistor TypeNPN, PNP
Current - Collector (Ic) (Max)150mA
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic300mV @ 10mA, 100mA, 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 2mA, 6V
Power - Max200mW
Frequency - Transition120MHz, 150MHz
Operating Temperature-
Mounting TypeSurface Mount
Package / Case6-TSSOP, SC-88, SOT-363
Supplier Device PackageUS6

Frequently Asked Questions

HN1B01FU-Y,LXHF is a Transistors - Bipolar (BJT) - Arrays manufactured by Toshiba Semiconductor and Storage. AUTO AEC-Q PNP + NPN TR VCEO:-50

The mounting type of HN1B01FU-Y,LXHF is Surface Mount.

The package type of HN1B01FU-Y,LXHF is 6-TSSOP, SC-88, SOT-363.

The current rating of HN1B01FU-Y,LXHF is 150mA.

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