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HN1A01FE-GR,LF - Toshiba Semiconductor and Storage - Transistors - Bipolar (BJT) - Arrays

HN1A01FE-GR,LF

Toshiba Semiconductor and Storage

TRANS 2PNP 50V 0.15A ES6

HN1A01FE-GR,LF is a Transistors - Bipolar (BJT) - Arrays manufactured by Toshiba Semiconductor and Storage. TRANS 2PNP 50V 0.15A ES6. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case SOT-563, SOT-666, current - collector (ic) (max) 150mA.

In Stock: 6,964

Product Attributes

AttributeValue
Product StatusActive
Transistor Type2 PNP (Dual)
Current - Collector (Ic) (Max)150mA
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic300mV @ 10mA, 100mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 2mA, 6V
Power - Max100mW
Frequency - Transition80MHz
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSOT-563, SOT-666
Supplier Device PackageES6

Frequently Asked Questions

HN1A01FE-GR,LF is a Transistors - Bipolar (BJT) - Arrays manufactured by Toshiba Semiconductor and Storage. TRANS 2PNP 50V 0.15A ES6

The mounting type of HN1A01FE-GR,LF is Surface Mount.

The operating temperature range of HN1A01FE-GR,LF is 150°C (TJ).

The package type of HN1A01FE-GR,LF is SOT-563, SOT-666.

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