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2N3501 - Solid State Inc. - Transistors - Bipolar (BJT) - RF

2N3501

Solid State Inc.

BI-POLAR SILICON TRANSISTOR NPN

2N3501 is a Transistors - Bipolar (BJT) - RF manufactured by Solid State Inc.. BI-POLAR SILICON TRANSISTOR NPN. Key specifications: mounting type Through Hole, operating temperature -65°C ~ 200°C (TJ), package / case TO-205AD, TO-39-3 Metal Can, current - collector (ic) (max) 300mA.

In Stock: 8,886

Product Attributes

AttributeValue
Product StatusActive
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)150V
Frequency - Transition150MHz
Noise Figure (dB Typ @ f)-
Gain-
Power - Max1W
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 10V
Current - Collector (Ic) (Max)300mA
Operating Temperature-65°C ~ 200°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-205AD, TO-39-3 Metal Can
Supplier Device PackageTO-39

Frequently Asked Questions

2N3501 is a Transistors - Bipolar (BJT) - RF manufactured by Solid State Inc.. BI-POLAR SILICON TRANSISTOR NPN

The mounting type of 2N3501 is Through Hole.

The operating temperature range of 2N3501 is -65°C ~ 200°C (TJ).

The package type of 2N3501 is TO-205AD, TO-39-3 Metal Can.

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