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2N2913 - Solid State Inc. - Transistors - Bipolar (BJT) - Arrays

2N2913

Solid State Inc.

TO 78 DUAL SILICON TRANSISTORS N

2N2913 is a Transistors - Bipolar (BJT) - Arrays manufactured by Solid State Inc.. TO 78 DUAL SILICON TRANSISTORS N. Key specifications: mounting type Through Hole, package / case TO-78-6 Metal Can, current - collector (ic) (max) 30mA, power - max 500mW.

In Stock: 50

Product Attributes

AttributeValue
Product StatusActive
Transistor Type2 NPN (Dual)
Current - Collector (Ic) (Max)30mA
Voltage - Collector Emitter Breakdown (Max)45V
Vce Saturation (Max) @ Ib, Ic350mV @ 100µA, 1mA
Current - Collector Cutoff (Max)2nA
DC Current Gain (hFE) (Min) @ Ic, Vce150 @ 1mA, 5V
Power - Max500mW
Frequency - Transition-
Operating Temperature-
Mounting TypeThrough Hole
Package / CaseTO-78-6 Metal Can
Supplier Device PackageTO-78

Frequently Asked Questions

2N2913 is a Transistors - Bipolar (BJT) - Arrays manufactured by Solid State Inc.. TO 78 DUAL SILICON TRANSISTORS N

The mounting type of 2N2913 is Through Hole.

The package type of 2N2913 is TO-78-6 Metal Can.

The current rating of 2N2913 is 30mA.

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