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RJK0230DPA-00#J5A - Renesas Electronics America Inc - Transistors - FETs, MOSFETs - Arrays

RJK0230DPA-00#J5A

Renesas Electronics America Inc

POWER FIELD-EFFECT TRANSISTOR

RJK0230DPA-00#J5A is a Transistors - FETs, MOSFETs - Arrays manufactured by Renesas Electronics America Inc. POWER FIELD-EFFECT TRANSISTOR. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case 8-PowerVDFN, power - max 15W, 35W.

In Stock: 213,000

Product Attributes

AttributeValue
Product StatusActive
FET Type2 N-Channel (Half Bridge)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C20A, 50A
Rds On (Max) @ Id, Vgs7mOhm @ 10A, 10V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs7.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds1650pF @ 10V
Power - Max15W, 35W
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-PowerVDFN
Supplier Device Package8-WPAK-D

Frequently Asked Questions

RJK0230DPA-00#J5A is a Transistors - FETs, MOSFETs - Arrays manufactured by Renesas Electronics America Inc. POWER FIELD-EFFECT TRANSISTOR

The mounting type of RJK0230DPA-00#J5A is Surface Mount.

The operating temperature range of RJK0230DPA-00#J5A is 150°C (TJ).

The package type of RJK0230DPA-00#J5A is 8-PowerVDFN.

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