Renesas Electronics America Inc
POWER FIELD-EFFECT TRANSISTOR
RJK0222DNS-00#J5 is a Transistors - FETs, MOSFETs - Arrays manufactured by Renesas Electronics America Inc. POWER FIELD-EFFECT TRANSISTOR. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case 8-WDFN Exposed Pad, power - max 8W, 10W.
In Stock: 340,000
| Attribute | Value |
|---|---|
| Product Status | Active |
| FET Type | 2 N-Channel (Half Bridge) |
| FET Feature | Logic Level Gate, 4.5V Drive |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25°C | 14A, 16A |
| Rds On (Max) @ Id, Vgs | 9.2mOhm @ 7A, 10V |
| Vgs(th) (Max) @ Id | - |
| Gate Charge (Qg) (Max) @ Vgs | 6.2nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 810pF @ 10V |
| Power - Max | 8W, 10W |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-WDFN Exposed Pad |
| Supplier Device Package | 8-DFN (5x6) |
Submit your RFQ for RJK0222DNS-00#J5 and get a quote within 24 hours.
3J LIMITED
