Renesas Electronics America Inc
NESG2101 - NPN SIGE RF TRANSISTO
NESG2101M05-T1-A is a Transistors - Bipolar (BJT) - RF manufactured by Renesas Electronics America Inc. NESG2101 - NPN SIGE RF TRANSISTO. Key specifications: mounting type Surface Mount, package / case SOT-343F, current - collector (ic) (max) 100mA, power - max 500mW.
In Stock: 9,000
| Attribute | Value |
|---|---|
| Product Status | Obsolete |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 5V |
| Frequency - Transition | 17GHz |
| Noise Figure (dB Typ @ f) | 0.6dB ~ 1.2dB @ 1GHz ~ 2GHz |
| Gain | 11dB ~ 19dB |
| Power - Max | 500mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 130 @ 15mA, 2V |
| Current - Collector (Ic) (Max) | 100mA |
| Operating Temperature | - |
| Mounting Type | Surface Mount |
| Package / Case | SOT-343F |
| Supplier Device Package | M05 |
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3J LIMITED
