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NESG2021M16-T3-A - Renesas Electronics America Inc - Transistors - Bipolar (BJT) - RF

NESG2021M16-T3-A

Renesas Electronics America Inc

RF SMALL SIGNAL TRANSISTOR

NESG2021M16-T3-A is a Transistors - Bipolar (BJT) - RF manufactured by Renesas Electronics America Inc. RF SMALL SIGNAL TRANSISTOR. Key specifications: mounting type Surface Mount, package / case 6-SMD, Flat Leads, current - collector (ic) (max) 35mA, power - max 175mW.

In Stock: 19,380

Product Attributes

AttributeValue
Product StatusObsolete
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)5V
Frequency - Transition25GHz
Noise Figure (dB Typ @ f)0.9dB ~ 1.3dB @ 2GHz ~ 5.2GHz
Gain10dB ~ 18dB
Power - Max175mW
DC Current Gain (hFE) (Min) @ Ic, Vce130 @ 5mA, 2V
Current - Collector (Ic) (Max)35mA
Operating Temperature-
Mounting TypeSurface Mount
Package / Case6-SMD, Flat Leads
Supplier Device PackageM16, 1208

Frequently Asked Questions

NESG2021M16-T3-A is a Transistors - Bipolar (BJT) - RF manufactured by Renesas Electronics America Inc. RF SMALL SIGNAL TRANSISTOR

The mounting type of NESG2021M16-T3-A is Surface Mount.

The package type of NESG2021M16-T3-A is 6-SMD, Flat Leads.

The current rating of NESG2021M16-T3-A is 35mA.

Yes, NESG2021M16-T3-A is listed as Obsolete. Consider requesting a quote for alternative parts.

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