Renesas Electronics America Inc
RF 0.035A C BAND GERMANIUM NPN
HSG1002VE-TL-E is a Transistors - Bipolar (BJT) - RF manufactured by Renesas Electronics America Inc. RF 0.035A C BAND GERMANIUM NPN. Key specifications: mounting type Surface Mount, package / case 4-SMD, Gull Wing, current - collector (ic) (max) 35mA, power - max 200mW.
In Stock: 519,687
| Attribute | Value |
|---|---|
| Product Status | Active |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 3.5V |
| Frequency - Transition | 38GHz |
| Noise Figure (dB Typ @ f) | 0.7dB ~ 1.8dB @ 1.8GHz ~ 5.8GHz |
| Gain | 8dB ~ 19.5dB |
| Power - Max | 200mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 5mA, 2V |
| Current - Collector (Ic) (Max) | 35mA |
| Operating Temperature | - |
| Mounting Type | Surface Mount |
| Package / Case | 4-SMD, Gull Wing |
| Supplier Device Package | 4-MFPAK |
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