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HFA3127RZ - Renesas Electronics America Inc - Transistors - Bipolar (BJT) - RF

HFA3127RZ

Renesas Electronics America Inc

RF TRANS 5 NPN 12V 8GHZ 16QFN

HFA3127RZ is a Transistors - Bipolar (BJT) - RF manufactured by Renesas Electronics America Inc. RF TRANS 5 NPN 12V 8GHZ 16QFN. Key specifications: mounting type Surface Mount, operating temperature 175°C (TJ), package / case 16-VFQFN Exposed Pad, current - collector (ic) (max) 65mA.

In Stock: 115

Product Attributes

AttributeValue
Product StatusActive
Transistor Type5 NPN
Voltage - Collector Emitter Breakdown (Max)12V
Frequency - Transition8GHz
Noise Figure (dB Typ @ f)3.5dB @ 1GHz
Gain-
Power - Max150mW
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 10mA, 2V
Current - Collector (Ic) (Max)65mA
Operating Temperature175°C (TJ)
Mounting TypeSurface Mount
Package / Case16-VFQFN Exposed Pad
Supplier Device Package16-QFN (3x3)

Frequently Asked Questions

HFA3127RZ is a Transistors - Bipolar (BJT) - RF manufactured by Renesas Electronics America Inc. RF TRANS 5 NPN 12V 8GHZ 16QFN

The mounting type of HFA3127RZ is Surface Mount.

The operating temperature range of HFA3127RZ is 175°C (TJ).

The package type of HFA3127RZ is 16-VFQFN Exposed Pad.

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Manufacturers in Transistors - Bipolar (BJT) - RF

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