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PJS6602_S2_00001 - Panjit International Inc. - Transistors - FETs, MOSFETs - Arrays

PJS6602_S2_00001

Panjit International Inc.

20V COMPLEMENTARY ENHANCEMENT MO

PJS6602_S2_00001 is a Transistors - FETs, MOSFETs - Arrays manufactured by Panjit International Inc.. 20V COMPLEMENTARY ENHANCEMENT MO. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case SOT-23-6, power - max 1.25W (Ta).

In Stock: 5,410

Product Attributes

AttributeValue
Product StatusActive
FET TypeN and P-Channel Complementary
FET FeatureStandard
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C5.2A (Ta), 3.4A (Ta)
Rds On (Max) @ Id, Vgs36mOhm @ 5.2A, 4.5V, 82mOhm @ 3.4A, 4.5V
Vgs(th) (Max) @ Id1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs4.1nC @ 4.5V, 7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds396pF @ 10V, 522pF @ 10V
Power - Max1.25W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSOT-23-6
Supplier Device PackageSOT-23-6

Frequently Asked Questions

PJS6602_S2_00001 is a Transistors - FETs, MOSFETs - Arrays manufactured by Panjit International Inc.. 20V COMPLEMENTARY ENHANCEMENT MO

The mounting type of PJS6602_S2_00001 is Surface Mount.

The operating temperature range of PJS6602_S2_00001 is -55°C ~ 150°C (TJ).

The package type of PJS6602_S2_00001 is SOT-23-6.

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