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MMBT918_R1_00001 - Panjit International Inc. - Transistors - Bipolar (BJT) - RF

MMBT918_R1_00001

Panjit International Inc.

VHF/UHF NPN SILICON TRANSISTOR

MMBT918_R1_00001 is a Transistors - Bipolar (BJT) - RF manufactured by Panjit International Inc.. VHF/UHF NPN SILICON TRANSISTOR. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case TO-236-3, SC-59, SOT-23-3, current - collector (ic) (max) 50mA.

In Stock: 2,969

Product Attributes

AttributeValue
Product StatusActive
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)15V
Frequency - Transition600MHz
Noise Figure (dB Typ @ f)-
Gain-
Power - Max225mW
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 3mA, 1V
Current - Collector (Ic) (Max)50mA
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSOT-23

Frequently Asked Questions

MMBT918_R1_00001 is a Transistors - Bipolar (BJT) - RF manufactured by Panjit International Inc.. VHF/UHF NPN SILICON TRANSISTOR

The mounting type of MMBT918_R1_00001 is Surface Mount.

The operating temperature range of MMBT918_R1_00001 is -55°C ~ 150°C (TJ).

The package type of MMBT918_R1_00001 is TO-236-3, SC-59, SOT-23-3.

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