MOSFET 2N-CH 80V 1.1A 8SOIC
NTMD6601NR2G is a Transistors - FETs, MOSFETs - Arrays manufactured by onsemi. MOSFET 2N-CH 80V 1.1A 8SOIC. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-SOIC (0.154", 3.90mm Width), power - max 600mW.
In Stock: 60,595
| Attribute | Value |
|---|---|
| Product Status | Obsolete |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 80V |
| Current - Continuous Drain (Id) @ 25°C | 1.1A |
| Rds On (Max) @ Id, Vgs | 215mOhm @ 2.2A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 400pF @ 25V |
| Power - Max | 600mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SOIC |
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3J LIMITED
