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NTGD4167CT1G - onsemi - Transistors - FETs, MOSFETs - Arrays

NTGD4167CT1G

onsemi

MOSFET N/P-CH 30V 2.6/1.9A 6TSOP

NTGD4167CT1G is a Transistors - FETs, MOSFETs - Arrays manufactured by onsemi. MOSFET N/P-CH 30V 2.6/1.9A 6TSOP. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case SOT-23-6 Thin, TSOT-23-6, power - max 900mW.

In Stock: 5,396

Product Attributes

AttributeValue
Product StatusActive
FET TypeN and P-Channel
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C2.6A, 1.9A
Rds On (Max) @ Id, Vgs90mOhm @ 2.6A, 4.5V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs5.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds295pF @ 15V
Power - Max900mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSOT-23-6 Thin, TSOT-23-6
Supplier Device Package6-TSOP

Frequently Asked Questions

NTGD4167CT1G is a Transistors - FETs, MOSFETs - Arrays manufactured by onsemi. MOSFET N/P-CH 30V 2.6/1.9A 6TSOP

The mounting type of NTGD4167CT1G is Surface Mount.

The operating temperature range of NTGD4167CT1G is -55°C ~ 150°C (TJ).

The package type of NTGD4167CT1G is SOT-23-6 Thin, TSOT-23-6.

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