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BFU550WF - NXP Semiconductors - Transistors - Bipolar (BJT) - RF

BFU550WF

NXP Semiconductors

BFU550W - NPN WIDEBAND SILICON R

BFU550WF is a Transistors - Bipolar (BJT) - RF manufactured by NXP Semiconductors. BFU550W - NPN WIDEBAND SILICON R. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 150°C (TJ), package / case SC-70, SOT-323, current - collector (ic) (max) 50mA.

In Stock: 790,000

Product Attributes

AttributeValue
Product StatusObsolete
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)12V
Frequency - Transition11GHz
Noise Figure (dB Typ @ f)1.3dB @ 1.8GHz
Gain18dB
Power - Max450mW
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 15mA, 8V
Current - Collector (Ic) (Max)50mA
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSC-70, SOT-323
Supplier Device PackageSC-70

Frequently Asked Questions

BFU550WF is a Transistors - Bipolar (BJT) - RF manufactured by NXP Semiconductors. BFU550W - NPN WIDEBAND SILICON R

The mounting type of BFU550WF is Surface Mount.

The operating temperature range of BFU550WF is -40°C ~ 150°C (TJ).

The package type of BFU550WF is SC-70, SOT-323.

Yes, BFU550WF is listed as Obsolete. Consider requesting a quote for alternative parts.

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Manufacturers in Transistors - Bipolar (BJT) - RF

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