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NTE2018 - NTE Electronics, Inc - Transistors - Bipolar (BJT) - Arrays

NTE2018

NTE Electronics, Inc

IC-8 CHAN CMOS/TTL DR 18-PIN DIP

NTE2018 is a Transistors - Bipolar (BJT) - Arrays manufactured by NTE Electronics, Inc. IC-8 CHAN CMOS/TTL DR 18-PIN DIP. Key specifications: mounting type Through Hole, operating temperature -20°C ~ 85°C (TA), package / case 18-DIP (0.300", 7.62mm), current - collector (ic) (max) 600mA.

In Stock: 5,142

Product Attributes

AttributeValue
Product StatusActive
Transistor Type8 NPN Darlington
Current - Collector (Ic) (Max)600mA
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic1.6V @ 350mA, 500A
Current - Collector Cutoff (Max)-
DC Current Gain (hFE) (Min) @ Ic, Vce-
Power - Max1W
Frequency - Transition-
Operating Temperature-20°C ~ 85°C (TA)
Mounting TypeThrough Hole
Package / Case18-DIP (0.300", 7.62mm)
Supplier Device Package18-PDIP

Frequently Asked Questions

NTE2018 is a Transistors - Bipolar (BJT) - Arrays manufactured by NTE Electronics, Inc. IC-8 CHAN CMOS/TTL DR 18-PIN DIP

The mounting type of NTE2018 is Through Hole.

The operating temperature range of NTE2018 is -20°C ~ 85°C (TA).

The package type of NTE2018 is 18-DIP (0.300", 7.62mm).

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