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MRF5812GR1 - Microsemi Corporation - Transistors - Bipolar (BJT) - RF

MRF5812GR1

Microsemi Corporation

RF TRANS NPN 15V 5GHZ 8SO

MRF5812GR1 is a Transistors - Bipolar (BJT) - RF manufactured by Microsemi Corporation. RF TRANS NPN 15V 5GHZ 8SO. Key specifications: mounting type Surface Mount, package / case 8-SOIC (0.154", 3.90mm Width), current - collector (ic) (max) 200mA, power - max 1.25W.

In Stock: 5,628

Product Attributes

AttributeValue
Product StatusObsolete
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)15V
Frequency - Transition5GHz
Noise Figure (dB Typ @ f)2dB ~ 3dB @ 500MHz
Gain13dB ~ 15.5dB
Power - Max1.25W
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 50mA, 5V
Current - Collector (Ic) (Max)200mA
Operating Temperature-
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO

Frequently Asked Questions

MRF5812GR1 is a Transistors - Bipolar (BJT) - RF manufactured by Microsemi Corporation. RF TRANS NPN 15V 5GHZ 8SO

The mounting type of MRF5812GR1 is Surface Mount.

The package type of MRF5812GR1 is 8-SOIC (0.154", 3.90mm Width).

The current rating of MRF5812GR1 is 200mA.

Yes, MRF5812GR1 is listed as Obsolete. Consider requesting a quote for alternative parts.

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