IC DRAM 512MBIT PARALLEL 60FBGA
MT46V32M16CV-5B:J is a Memory manufactured by Micron Technology Inc.. IC DRAM 512MBIT PARALLEL 60FBGA. Key specifications: mounting type Surface Mount, operating temperature 0°C ~ 70°C (TA), voltage - supply 2.5V ~ 2.7V, package / case 60-TFBGA.
In Stock: 9,334
| Attribute | Value |
|---|---|
| Product Status | Obsolete |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR |
| Memory Size | 512Mb (32M x 16) |
| Memory Interface | Parallel |
| Clock Frequency | 200 MHz |
| Write Cycle Time - Word, Page | 15ns |
| Access Time | 700 ps |
| Voltage - Supply | 2.5V ~ 2.7V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 60-TFBGA |
| Supplier Device Package | 60-FBGA (8x12.5) |
MT46V32M16CV-5B:J is Obsolete. Consider these compatible alternatives:
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| MT46V64M8TG-5B:D TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 66TSOP | 100% | View |
| AS4C4M16D1A-5TANTR | Alliance Memory, Inc. | IC DRAM 64MBIT PAR 66TSOP II | 99% | View |
| IS43R16320F-6TL | ISSI, Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 66TSOP II | 92% | View |
| AS4C64M16D1A-6BIN | Alliance Memory, Inc. | 1G - A DIE 4M X 16 2.5V INDUSTRI | 91% | View |
| EM6A9160TSC-4G | Etron Technology, Inc. | IC DRAM 128MBIT PAR 66TSOP II | 87% | View |
| EM6A9160TSC-4IG | Etron Technology, Inc. | IC DRAM 128MBIT PAR 66TSOP II | 87% | View |
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