1G - A DIE 4M X 16 2.5V INDUSTRI
AS4C64M16D1A-6BIN is a Memory manufactured by Alliance Memory, Inc.. 1G - A DIE 4M X 16 2.5V INDUSTRI. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 85°C (TA), voltage - supply 2.3V ~ 2.7V, package / case 60-TFBGA.
In Stock: 240
| Attribute | Value |
|---|---|
| Product Status | Active |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR |
| Memory Size | - |
| Memory Interface | SSTL_2 |
| Clock Frequency | 166 MHz |
| Write Cycle Time - Word, Page | 15ns |
| Access Time | 700 ps |
| Voltage - Supply | 2.3V ~ 2.7V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 60-TFBGA |
| Supplier Device Package | 60-FBGA (8x13) |
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| IS43R16160F-5BLI-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 256MBIT PARALLEL 60TFBGA | 92% | View |
| IS43R32800D-5BLI | ISSI, Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 144LFBGA | 92% | View |
| AS4C4M16D1A-5TANTR | Alliance Memory, Inc. | IC DRAM 64MBIT PAR 66TSOP II | 92% | View |
| IS43R32160D-5BLI-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 144LFBGA | 91% | View |
| MT46V32M16P-5B IT:J TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 66TSOP | 91% | View |
| EM6AA160TSE-4IG | Etron Technology, Inc. | IC DRAM 256MBIT PAR 66TSOP II | 83% | View |
Submit your RFQ for AS4C64M16D1A-6BIN and get a quote within 24 hours.
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