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LS350 DIP 8L - Linear Integrated Systems, Inc. - Transistors - Bipolar (BJT) - Arrays

LS350 DIP 8L

Linear Integrated Systems, Inc.

TIGHTLY MATCHED, MONOLITHIC DUAL

LS350 DIP 8L is a Transistors - Bipolar (BJT) - Arrays manufactured by Linear Integrated Systems, Inc.. TIGHTLY MATCHED, MONOLITHIC DUAL. Key specifications: mounting type Through Hole, operating temperature 150°C (TJ), package / case 8-DIP (0.300", 7.62mm), current - collector (ic) (max) 10mA.

In Stock: 100

Product Attributes

AttributeValue
Product StatusActive
Transistor Type2 PNP (Dual)
Current - Collector (Ic) (Max)10mA
Voltage - Collector Emitter Breakdown (Max)25V
Vce Saturation (Max) @ Ib, Ic500mV @ 100µA, 1mA
Current - Collector Cutoff (Max)200pA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 1mA, 5V
Power - Max500mW
Frequency - Transition200MHz
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Package / Case8-DIP (0.300", 7.62mm)
Supplier Device Package8-DIP

Frequently Asked Questions

LS350 DIP 8L is a Transistors - Bipolar (BJT) - Arrays manufactured by Linear Integrated Systems, Inc.. TIGHTLY MATCHED, MONOLITHIC DUAL

The mounting type of LS350 DIP 8L is Through Hole.

The operating temperature range of LS350 DIP 8L is 150°C (TJ).

The package type of LS350 DIP 8L is 8-DIP (0.300", 7.62mm).

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