MOSFET 2N-CH 60V 20A 8TDSON
IPG20N06S4L26AATMA1 is a Transistors - FETs, MOSFETs - Arrays manufactured by Infineon Technologies. MOSFET 2N-CH 60V 20A 8TDSON. Key specifications: mounting type Surface Mount, Wettable Flank, operating temperature -55°C ~ 175°C (TJ), package / case 8-PowerVDFN, power - max 33W.
In Stock: 9,334
| Attribute | Value |
|---|---|
| Product Status | Active |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 20A |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 17A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 10µA |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1430pF @ 25V |
| Power - Max | 33W |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount, Wettable Flank |
| Package / Case | 8-PowerVDFN |
| Supplier Device Package | PG-TDSON-8-10 |
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