P-CHANNEL POWER MOSFET
BSO211P is a Transistors - FETs, MOSFETs - Arrays manufactured by Infineon Technologies. P-CHANNEL POWER MOSFET. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-SOIC (0.154", 3.90mm Width), power - max 2W.
In Stock: 20,000
| Attribute | Value |
|---|---|
| Product Status | Active |
| FET Type | 2 P-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 4.7A |
| Rds On (Max) @ Id, Vgs | 67mOhm @ 4.7A, 4.5V |
| Vgs(th) (Max) @ Id | 1.2V @ 25µA |
| Gate Charge (Qg) (Max) @ Vgs | 23.9nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 920pF @ 15V |
| Power - Max | 2W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | PG-DSO-8 |
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3J LIMITED
