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BSG0811NDATMA1 - Infineon Technologies - Transistors - FETs, MOSFETs - Arrays

BSG0811NDATMA1

Infineon Technologies

MOSFET 2N-CH 25V 19A/41A 8TISON

BSG0811NDATMA1 is a Transistors - FETs, MOSFETs - Arrays manufactured by Infineon Technologies. MOSFET 2N-CH 25V 19A/41A 8TISON. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-PowerTDFN, power - max 2.5W.

In Stock: 27,676

Product Attributes

AttributeValue
Product StatusActive
FET Type2 N-Channel (Dual) Asymmetrical
FET FeatureLogic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C19A, 41A
Rds On (Max) @ Id, Vgs3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs8.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds1100pF @ 12V
Power - Max2.5W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-PowerTDFN
Supplier Device PackagePG-TISON-8

Frequently Asked Questions

BSG0811NDATMA1 is a Transistors - FETs, MOSFETs - Arrays manufactured by Infineon Technologies. MOSFET 2N-CH 25V 19A/41A 8TISON

The mounting type of BSG0811NDATMA1 is Surface Mount.

The operating temperature range of BSG0811NDATMA1 is -55°C ~ 150°C (TJ).

The package type of BSG0811NDATMA1 is 8-PowerTDFN.

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