MOSFET 2N-CH 25V 19A/39A 8TISON
BSG0810NDIATMA1 is a Transistors - FETs, MOSFETs - Arrays manufactured by Infineon Technologies. MOSFET 2N-CH 25V 19A/39A 8TISON. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 155°C (TJ), package / case 8-PowerTDFN, power - max 2.5W.
In Stock: 4,100
| Attribute | Value |
|---|---|
| Product Status | Active |
| FET Type | 2 N-Channel (Dual) Asymmetrical |
| FET Feature | Logic Level Gate, 4.5V Drive |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25°C | 19A, 39A |
| Rds On (Max) @ Id, Vgs | 3mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 8.4nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 1040pF @ 12V |
| Power - Max | 2.5W |
| Operating Temperature | -55°C ~ 155°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Supplier Device Package | PG-TISON-8 |
Submit your RFQ for BSG0810NDIATMA1 and get a quote within 24 hours.
3J LIMITED
