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BFS481H6327XTSA1 - Infineon Technologies - Transistors - Bipolar (BJT) - RF

BFS481H6327XTSA1

Infineon Technologies

RF TRANS 2 NPN 12V 8GHZ SOT363-6

BFS481H6327XTSA1 is a Transistors - Bipolar (BJT) - RF manufactured by Infineon Technologies. RF TRANS 2 NPN 12V 8GHZ SOT363-6. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case 6-VSSOP, SC-88, SOT-363, current - collector (ic) (max) 20mA.

In Stock: 24,000

Product Attributes

AttributeValue
Product StatusActive
Transistor Type2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max)12V
Frequency - Transition8GHz
Noise Figure (dB Typ @ f)0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
Gain20dB
Power - Max175mW
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 5mA, 8V
Current - Collector (Ic) (Max)20mA
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / Case6-VSSOP, SC-88, SOT-363
Supplier Device PackagePG-SOT363-PO

Frequently Asked Questions

BFS481H6327XTSA1 is a Transistors - Bipolar (BJT) - RF manufactured by Infineon Technologies. RF TRANS 2 NPN 12V 8GHZ SOT363-6

The mounting type of BFS481H6327XTSA1 is Surface Mount.

The operating temperature range of BFS481H6327XTSA1 is 150°C (TJ).

The package type of BFS481H6327XTSA1 is 6-VSSOP, SC-88, SOT-363.

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