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BFS17WE6327 - Infineon Technologies - Transistors - Bipolar (BJT) - RF

BFS17WE6327

Infineon Technologies

RF BIPOLAR TRANSISTOR

BFS17WE6327 is a Transistors - Bipolar (BJT) - RF manufactured by Infineon Technologies. RF BIPOLAR TRANSISTOR. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case SC-70, SOT-323, current - collector (ic) (max) 25mA.

In Stock: 2,705

Product Attributes

AttributeValue
Product StatusActive
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)15V
Frequency - Transition1.4GHz
Noise Figure (dB Typ @ f)3.5dB ~ 5dB @ 800MHz
Gain-
Power - Max280mW
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 2mA, 1V
Current - Collector (Ic) (Max)25mA
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSC-70, SOT-323
Supplier Device PackageSOT-323

Frequently Asked Questions

BFS17WE6327 is a Transistors - Bipolar (BJT) - RF manufactured by Infineon Technologies. RF BIPOLAR TRANSISTOR

The mounting type of BFS17WE6327 is Surface Mount.

The operating temperature range of BFS17WE6327 is 150°C (TJ).

The package type of BFS17WE6327 is SC-70, SOT-323.

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