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BFR750L3RHE6327 - Infineon Technologies - Transistors - Bipolar (BJT) - RF

BFR750L3RHE6327

Infineon Technologies

RF BIPOLAR TRANSISTOR

BFR750L3RHE6327 is a Transistors - Bipolar (BJT) - RF manufactured by Infineon Technologies. RF BIPOLAR TRANSISTOR. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case SC-101, SOT-883, current - collector (ic) (max) 90mA.

In Stock: 37,286

Product Attributes

AttributeValue
Product StatusActive
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)4.7V
Frequency - Transition37GHz
Noise Figure (dB Typ @ f)0.6dB ~ 1.1dB @ 1.8GHz ~ 6GHz
Gain21dB
Power - Max360mW
DC Current Gain (hFE) (Min) @ Ic, Vce160 @ 60mA, 3V
Current - Collector (Ic) (Max)90mA
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSC-101, SOT-883
Supplier Device PackagePG-TSLP-3

Frequently Asked Questions

BFR750L3RHE6327 is a Transistors - Bipolar (BJT) - RF manufactured by Infineon Technologies. RF BIPOLAR TRANSISTOR

The mounting type of BFR750L3RHE6327 is Surface Mount.

The operating temperature range of BFR750L3RHE6327 is 150°C (TJ).

The package type of BFR750L3RHE6327 is SC-101, SOT-883.

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