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BFR35APE6327HTSA1 - Infineon Technologies - Transistors - Bipolar (BJT) - RF

BFR35APE6327HTSA1

Infineon Technologies

RF TRANS NPN 15V 5GHZ SOT23-3

BFR35APE6327HTSA1 is a Transistors - Bipolar (BJT) - RF manufactured by Infineon Technologies. RF TRANS NPN 15V 5GHZ SOT23-3. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case TO-236-3, SC-59, SOT-23-3, current - collector (ic) (max) 45mA.

In Stock: 2,990

Product Attributes

AttributeValue
Product StatusActive
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)15V
Frequency - Transition5GHz
Noise Figure (dB Typ @ f)1.4dB ~ 2dB @ 900MHz ~ 1.8GHz
Gain10.5dB ~ 16dB
Power - Max280mW
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 15mA, 8V
Current - Collector (Ic) (Max)45mA
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackagePG-SOT23

Frequently Asked Questions

BFR35APE6327HTSA1 is a Transistors - Bipolar (BJT) - RF manufactured by Infineon Technologies. RF TRANS NPN 15V 5GHZ SOT23-3

The mounting type of BFR35APE6327HTSA1 is Surface Mount.

The operating temperature range of BFR35APE6327HTSA1 is 150°C (TJ).

The package type of BFR35APE6327HTSA1 is TO-236-3, SC-59, SOT-23-3.

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Manufacturers in Transistors - Bipolar (BJT) - RF

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