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BFR193E6327HTSA1 - Infineon Technologies - Transistors - Bipolar (BJT) - RF

BFR193E6327HTSA1

Infineon Technologies

RF TRANS NPN 12V 8GHZ SOT23-3

BFR193E6327HTSA1 is a Transistors - Bipolar (BJT) - RF manufactured by Infineon Technologies. RF TRANS NPN 12V 8GHZ SOT23-3. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case TO-236-3, SC-59, SOT-23-3, current - collector (ic) (max) 80mA.

In Stock: 29,845

Product Attributes

AttributeValue
Product StatusActive
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)12V
Frequency - Transition8GHz
Noise Figure (dB Typ @ f)1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Gain10dB ~ 15dB
Power - Max580mW
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 30mA, 8V
Current - Collector (Ic) (Max)80mA
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackagePG-SOT23

Frequently Asked Questions

BFR193E6327HTSA1 is a Transistors - Bipolar (BJT) - RF manufactured by Infineon Technologies. RF TRANS NPN 12V 8GHZ SOT23-3

The mounting type of BFR193E6327HTSA1 is Surface Mount.

The operating temperature range of BFR193E6327HTSA1 is 150°C (TJ).

The package type of BFR193E6327HTSA1 is TO-236-3, SC-59, SOT-23-3.

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