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BFR182E-6327 - Infineon Technologies - Transistors - Bipolar (BJT) - RF

BFR182E-6327

Infineon Technologies

RF N-CHANNEL MOSFET

BFR182E-6327 is a Transistors - Bipolar (BJT) - RF manufactured by Infineon Technologies. RF N-CHANNEL MOSFET. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case TO-236-3, SC-59, SOT-23-3, current - collector (ic) (max) 35mA.

In Stock: 89,000

Product Attributes

AttributeValue
Product StatusActive
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)12V
Frequency - Transition8GHz
Noise Figure (dB Typ @ f)1.3dB @ 1.8GHz
Gain9.5dB
Power - Max250mW
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 10mA, 8V
Current - Collector (Ic) (Max)35mA
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSOT-23

Frequently Asked Questions

BFR182E-6327 is a Transistors - Bipolar (BJT) - RF manufactured by Infineon Technologies. RF N-CHANNEL MOSFET

The mounting type of BFR182E-6327 is Surface Mount.

The operating temperature range of BFR182E-6327 is 150°C (TJ).

The package type of BFR182E-6327 is TO-236-3, SC-59, SOT-23-3.

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Manufacturers in Transistors - Bipolar (BJT) - RF

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