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BFR181WE6327 - Infineon Technologies - Transistors - Bipolar (BJT) - RF

BFR181WE6327

Infineon Technologies

LOW-NOISE TRANSISTOR

BFR181WE6327 is a Transistors - Bipolar (BJT) - RF manufactured by Infineon Technologies. LOW-NOISE TRANSISTOR. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case SC-70, SOT-323, current - collector (ic) (max) 20mA.

In Stock: 31,570

Product Attributes

AttributeValue
Product StatusActive
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)12V
Frequency - Transition8GHz
Noise Figure (dB Typ @ f)0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
Gain19dB
Power - Max175mW
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 5mA, 8V
Current - Collector (Ic) (Max)20mA
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSC-70, SOT-323
Supplier Device PackageSOT-323

Frequently Asked Questions

BFR181WE6327 is a Transistors - Bipolar (BJT) - RF manufactured by Infineon Technologies. LOW-NOISE TRANSISTOR

The mounting type of BFR181WE6327 is Surface Mount.

The operating temperature range of BFR181WE6327 is 150°C (TJ).

The package type of BFR181WE6327 is SC-70, SOT-323.

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Manufacturers in Transistors - Bipolar (BJT) - RF

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