LOW-NOISE TRANSISTOR
BFR181E6327 is a Transistors - Bipolar (BJT) - RF manufactured by Infineon Technologies. LOW-NOISE TRANSISTOR. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case TO-236-3, SC-59, SOT-23-3, current - collector (ic) (max) 20mA.
In Stock: 54,000
| Attribute | Value |
|---|---|
| Product Status | Active |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| Frequency - Transition | 8GHz |
| Noise Figure (dB Typ @ f) | 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz |
| Gain | 18.5dB |
| Power - Max | 175mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 5mA, 8V |
| Current - Collector (Ic) (Max) | 20mA |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | PG-SOT23 |
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3J LIMITED
