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BFP740E6327 - Infineon Technologies - Transistors - Bipolar (BJT) - RF

BFP740E6327

Infineon Technologies

RF TRANSISTOR, X BAND, NPN

BFP740E6327 is a Transistors - Bipolar (BJT) - RF manufactured by Infineon Technologies. RF TRANSISTOR, X BAND, NPN. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case SC-82A, SOT-343, current - collector (ic) (max) 30mA.

In Stock: 31,830

Product Attributes

AttributeValue
Product StatusActive
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)4.7V
Frequency - Transition42GHz
Noise Figure (dB Typ @ f)0.5dB ~ 0.85dB @ 1.8GHz ~ 6GHz
Gain27dB
Power - Max160mW
DC Current Gain (hFE) (Min) @ Ic, Vce160 @ 25mA, 3V
Current - Collector (Ic) (Max)30mA
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSC-82A, SOT-343
Supplier Device PackagePG-SOT343-4

Frequently Asked Questions

BFP740E6327 is a Transistors - Bipolar (BJT) - RF manufactured by Infineon Technologies. RF TRANSISTOR, X BAND, NPN

The mounting type of BFP740E6327 is Surface Mount.

The operating temperature range of BFP740E6327 is 150°C (TJ).

The package type of BFP740E6327 is SC-82A, SOT-343.

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