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BFP720FE6327 - Infineon Technologies - Transistors - Bipolar (BJT) - RF

BFP720FE6327

Infineon Technologies

RF TRANSISTOR, X BAND, NPN

BFP720FE6327 is a Transistors - Bipolar (BJT) - RF manufactured by Infineon Technologies. RF TRANSISTOR, X BAND, NPN. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case 4-SMD, Flat Leads, current - collector (ic) (max) 25mA.

In Stock: 1,500

Product Attributes

AttributeValue
Product StatusActive
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)4.7V
Frequency - Transition45GHz
Noise Figure (dB Typ @ f)0.4dB ~ 1dB @ 150MHz ~ 10GHz
Gain10.5dB ~ 28dB
Power - Max100mW
DC Current Gain (hFE) (Min) @ Ic, Vce160 @ 13mA, 3V
Current - Collector (Ic) (Max)25mA
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / Case4-SMD, Flat Leads
Supplier Device Package4-TSFP

Frequently Asked Questions

BFP720FE6327 is a Transistors - Bipolar (BJT) - RF manufactured by Infineon Technologies. RF TRANSISTOR, X BAND, NPN

The mounting type of BFP720FE6327 is Surface Mount.

The operating temperature range of BFP720FE6327 is 150°C (TJ).

The package type of BFP720FE6327 is 4-SMD, Flat Leads.

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