RF BIPOLAR TRANSISTOR
BFP640E6327 is a Transistors - Bipolar (BJT) - RF manufactured by Infineon Technologies. RF BIPOLAR TRANSISTOR. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case SC-82A, SOT-343, current - collector (ic) (max) 50mA.
In Stock: 26,583
| Attribute | Value |
|---|---|
| Product Status | Active |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 4.5V |
| Frequency - Transition | 40GHz |
| Noise Figure (dB Typ @ f) | 0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz |
| Gain | 24dB |
| Power - Max | 200mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 110 @ 30mA, 3V |
| Current - Collector (Ic) (Max) | 50mA |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | SC-82A, SOT-343 |
| Supplier Device Package | PG-SOT343-4 |
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