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BFP520FE6327 - Infineon Technologies - Transistors - Bipolar (BJT) - RF

BFP520FE6327

Infineon Technologies

LOW-NOISE SI TRANSISTOR

BFP520FE6327 is a Transistors - Bipolar (BJT) - RF manufactured by Infineon Technologies. LOW-NOISE SI TRANSISTOR. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case 4-SMD, Flat Leads, current - collector (ic) (max) 40mA.

In Stock: 15,000

Product Attributes

AttributeValue
Product StatusActive
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)3.5V
Frequency - Transition45GHz
Noise Figure (dB Typ @ f)0.95dB @ 1.8GHz
Gain22.5dB
Power - Max100mW
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 20mA, 2V
Current - Collector (Ic) (Max)40mA
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / Case4-SMD, Flat Leads
Supplier Device Package4-TSFP

Frequently Asked Questions

BFP520FE6327 is a Transistors - Bipolar (BJT) - RF manufactured by Infineon Technologies. LOW-NOISE SI TRANSISTOR

The mounting type of BFP520FE6327 is Surface Mount.

The operating temperature range of BFP520FE6327 is 150°C (TJ).

The package type of BFP520FE6327 is 4-SMD, Flat Leads.

Related Products

Manufacturers in Transistors - Bipolar (BJT) - RF

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