RF TRANSISTOR, L BAND, NPN
BFP196WE6327 is a Transistors - Bipolar (BJT) - RF manufactured by Infineon Technologies. RF TRANSISTOR, L BAND, NPN. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case SC-82A, SOT-343, current - collector (ic) (max) 150mA.
In Stock: 32,200
| Attribute | Value |
|---|---|
| Product Status | Active |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| Frequency - Transition | 7.5GHz |
| Noise Figure (dB Typ @ f) | 1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz |
| Gain | 12.5dB ~ 19dB |
| Power - Max | 700mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 50mA, 8V |
| Current - Collector (Ic) (Max) | 150mA |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | SC-82A, SOT-343 |
| Supplier Device Package | PG-SOT343-4 |
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