RFQ List

No items in your RFQ list

Estimated Total: $0.00
View RFQ List
BC857SH6327 - Infineon Technologies - Transistors - Bipolar (BJT) - Arrays

BC857SH6327

Infineon Technologies

BIPOLAR GEN PURPOSE TRANSISTOR

BC857SH6327 is a Transistors - Bipolar (BJT) - Arrays manufactured by Infineon Technologies. BIPOLAR GEN PURPOSE TRANSISTOR. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case 6-VSSOP, SC-88, SOT-363, current - collector (ic) (max) 100mA.

In Stock: 9,000

Product Attributes

AttributeValue
Product StatusActive
Transistor Type2 PNP (Dual)
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)45V
Vce Saturation (Max) @ Ib, Ic650mV @ 5mA, 100mA
Current - Collector Cutoff (Max)15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 2mA, 5V
Power - Max250mW
Frequency - Transition250MHz
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / Case6-VSSOP, SC-88, SOT-363
Supplier Device PackagePG-SOT363-6

Frequently Asked Questions

BC857SH6327 is a Transistors - Bipolar (BJT) - Arrays manufactured by Infineon Technologies. BIPOLAR GEN PURPOSE TRANSISTOR

The mounting type of BC857SH6327 is Surface Mount.

The operating temperature range of BC857SH6327 is 150°C (TJ).

The package type of BC857SH6327 is 6-VSSOP, SC-88, SOT-363.

Related Products

Manufacturers in Transistors - Bipolar (BJT) - Arrays

Need a Quote for This Part?

Submit your RFQ for BC857SH6327 and get a quote within 24 hours.

Top
Live Chat
Hello! How can we help you today? Feel free to ask about pricing, availability, or technical details.