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GE12047BCA3 - General Electric - Transistors - FETs, MOSFETs - Arrays

GE12047BCA3

General Electric

1200V 475A SiC Dual Module

GE12047BCA3 is a Transistors - FETs, MOSFETs - Arrays manufactured by General Electric. 1200V 475A SiC Dual Module. Key specifications: mounting type Chassis Mount, operating temperature -55°C ~ 150°C (Tc), package / case Module, power - max 1250W.

In Stock: 20

Product Attributes

AttributeValue
Product StatusActive
FET Type2 Independent
FET FeatureSilicon Carbide (SiC)
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C475A
Rds On (Max) @ Id, Vgs4.4mOhm @ 475A, 20V
Vgs(th) (Max) @ Id4.5V @ 160mA
Gate Charge (Qg) (Max) @ Vgs1248nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds29.3nF @ 600V
Power - Max1250W
Operating Temperature-55°C ~ 150°C (Tc)
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device Package-

Frequently Asked Questions

GE12047BCA3 is a Transistors - FETs, MOSFETs - Arrays manufactured by General Electric. 1200V 475A SiC Dual Module

The mounting type of GE12047BCA3 is Chassis Mount.

The operating temperature range of GE12047BCA3 is -55°C ~ 150°C (Tc).

The package type of GE12047BCA3 is Module.

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