POWER FIELD-EFFECT TRANSISTOR, 1
FQS4900TF is a Transistors - FETs, MOSFETs - Arrays manufactured by Fairchild Semiconductor. POWER FIELD-EFFECT TRANSISTOR, 1. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-SOIC (0.154", 3.90mm Width), power - max 2W.
In Stock: 36,948
| Attribute | Value |
|---|---|
| Product Status | Active |
| FET Type | N and P-Channel |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 60V, 300V |
| Current - Continuous Drain (Id) @ 25°C | 1.3A, 300mA |
| Rds On (Max) @ Id, Vgs | 550mOhm @ 650mA, 10V |
| Vgs(th) (Max) @ Id | 1.95V @ 20mA |
| Gate Charge (Qg) (Max) @ Vgs | 2.1nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Power - Max | 2W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SOIC |
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3J LIMITED
