N-CHANNEL POWER MOSFET
FDS6900S is a Transistors - FETs, MOSFETs - Arrays manufactured by Fairchild Semiconductor. N-CHANNEL POWER MOSFET. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-SOIC (0.154", 3.90mm Width), power - max 900mW (Ta).
In Stock: 296,790
| Attribute | Value |
|---|---|
| Product Status | Active |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 6.9A (Ta), 8.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 6.9A, 10V, 22mOhm @ 8.2A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA, 3V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 5V, 17nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 771pF @ 15V, 1238pF @ 15V |
| Power - Max | 900mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SOIC |
Submit your RFQ for FDS6900S and get a quote within 24 hours.
3J LIMITED
