POWER FIELD-EFFECT TRANSISTOR, N
FDMD8900 is a Transistors - FETs, MOSFETs - Arrays manufactured by Fairchild Semiconductor. POWER FIELD-EFFECT TRANSISTOR, N. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 12-PowerWDFN, power - max 2.1W.
In Stock: 15,710
| Attribute | Value |
|---|---|
| Product Status | Active |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 19A, 17A |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 19A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 35nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 2605pF @ 15V |
| Power - Max | 2.1W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 12-PowerWDFN |
| Supplier Device Package | 12-Power3.3x5 |
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