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2SC3651-TD-E - Fairchild Semiconductor - Transistors - Bipolar (BJT) - Arrays

2SC3651-TD-E

Fairchild Semiconductor

2SC3651 - NPN EPITAXIAL PLANAR S

2SC3651-TD-E is a Transistors - Bipolar (BJT) - Arrays manufactured by Fairchild Semiconductor. 2SC3651 - NPN EPITAXIAL PLANAR S. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case TO-243AA, current - collector (ic) (max) 200mA.

In Stock: 3,000

Product Attributes

AttributeValue
Product StatusActive
Transistor TypeNPN
Current - Collector (Ic) (Max)200mA
Voltage - Collector Emitter Breakdown (Max)100V
Vce Saturation (Max) @ Ib, Ic500mV @ 2mA, 100mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce500 @ 10mA, 5V
Power - Max500mW
Frequency - Transition150MHz
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-243AA
Supplier Device PackagePCP

Frequently Asked Questions

2SC3651-TD-E is a Transistors - Bipolar (BJT) - Arrays manufactured by Fairchild Semiconductor. 2SC3651 - NPN EPITAXIAL PLANAR S

The mounting type of 2SC3651-TD-E is Surface Mount.

The operating temperature range of 2SC3651-TD-E is 150°C (TJ).

The package type of 2SC3651-TD-E is TO-243AA.

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