GAN TRANS ASYMMETRICAL HALF BRID
EPC2111 is a Transistors - FETs, MOSFETs - Arrays manufactured by EPC. GAN TRANS ASYMMETRICAL HALF BRID. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 150°C (TJ), package / case Die.
In Stock: 21,750
| Attribute | Value |
|---|---|
| Product Status | Active |
| FET Type | 2 N-Channel (Half Bridge) |
| FET Feature | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 16A (Ta) |
| Rds On (Max) @ Id, Vgs | 19mOhm @ 15A, 5V, 8mOhm @ 15A, 5V |
| Vgs(th) (Max) @ Id | 2.5V @ 5mA |
| Gate Charge (Qg) (Max) @ Vgs | 2.2nC @ 5V, 5.7nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 230pF @ 15V, 590pF @ 15V |
| Power - Max | - |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | Die |
| Supplier Device Package | Die |
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3J LIMITED
