GAN TRANS ASYMMETRICAL HALF BRID
EPC2101 is a Transistors - FETs, MOSFETs - Arrays manufactured by EPC. GAN TRANS ASYMMETRICAL HALF BRID. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 150°C (TJ), package / case Die.
In Stock: 193
| Attribute | Value |
|---|---|
| Product Status | Active |
| FET Type | 2 N-Channel (Half Bridge) |
| FET Feature | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 9.5A, 38A |
| Rds On (Max) @ Id, Vgs | 11.5mOhm @ 20A, 5V, 2.7mOhm @ 20A, 5V |
| Vgs(th) (Max) @ Id | 2.5V @ 3mA, 2.5V @ 12mA |
| Gate Charge (Qg) (Max) @ Vgs | 2.7nC @ 5V, 12nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 300pF @ 30V, 1200pF @ 30V |
| Power - Max | - |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | Die |
| Supplier Device Package | Die |
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3J LIMITED
