RFQ List

No items in your RFQ list

Estimated Total: $0.00
View RFQ List
DMN3190LDW-13 - Diodes Incorporated - Transistors - FETs, MOSFETs - Arrays

DMN3190LDW-13

Diodes Incorporated

MOSFET 2N-CH 30V 1A SOT363

DMN3190LDW-13 is a Transistors - FETs, MOSFETs - Arrays manufactured by Diodes Incorporated. MOSFET 2N-CH 30V 1A SOT363. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 6-TSSOP, SC-88, SOT-363, power - max 320mW.

In Stock: 2,668

Product Attributes

AttributeValue
Product StatusActive
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C1A
Rds On (Max) @ Id, Vgs190mOhm @ 1.3A, 10V
Vgs(th) (Max) @ Id2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds87pF @ 20V
Power - Max320mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case6-TSSOP, SC-88, SOT-363
Supplier Device PackageSOT-363

Frequently Asked Questions

DMN3190LDW-13 is a Transistors - FETs, MOSFETs - Arrays manufactured by Diodes Incorporated. MOSFET 2N-CH 30V 1A SOT363

The mounting type of DMN3190LDW-13 is Surface Mount.

The operating temperature range of DMN3190LDW-13 is -55°C ~ 150°C (TJ).

The package type of DMN3190LDW-13 is 6-TSSOP, SC-88, SOT-363.

Related Products

Manufacturers in Transistors - FETs, MOSFETs - Arrays

Need a Quote for This Part?

Submit your RFQ for DMN3190LDW-13 and get a quote within 24 hours.

Top
Live Chat
Hello! How can we help you today? Feel free to ask about pricing, availability, or technical details.